Dulles, VA, June 7, 2021 -- GeneSiC Semiconductor's next-generation 750V G3R„¢SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC's G3R„¢, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.
œHigh-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry's best performing 750V SiC MOSFETs. Our G3R„¢ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition." said Dr. Ranbir Singh, President at GeneSiC Semiconductor.
G3R60MT07J “ 750V 60m© G3R„¢ TO-263-7 SiC MOSFET
G3R60MT07D “ 750V 60m© G3R„¢ TO-247-3 SiC MOSFET
G3R60MT07K “ 750V 60m© G3R„¢ TO-247-4 SIC MOSFET
Features:
- Industry's lowest gate charge (QG) and internal gate resistance (RG(INT) )
- Lowest RDS(ON) change with temperature
- Low output capacitance (COSS ) and miler capacitance (CGD )
- 100% avalanche (UIL) tested during production
- Industry-leading short circuit withstand capability
- Fast and reliable body diode with low VF and low QRR
- High and stable gate threshold voltage (VTH ) across all temperature and drain-bias conditions
- Advanced packaging technology for lower thermal resistance and lower ringing
- Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
- Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing
Applications:
- Solar (PV) Inverters
- EV / HEV Onboard Chargers
- Server & Telecom Power Supplies
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- Switched Mode Power Supplies (SMPS)
- Energy Storage and Battery Charging
- Induction Heating
All of GeneSiC Semiconductor's SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.
For datasheet and other resources, visit - https://www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com
All devices are available from authorized distributors - https://www.genesicsemi.com/sales-support/
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